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dc.contributor.authorEder, Sabrina Daniela
dc.contributor.authorHellner, Simen Kaasa
dc.contributor.authorForti, Stiven
dc.contributor.authorNordbotten, Jan Martin
dc.contributor.authorManson, Joseph R.
dc.contributor.authorColetti, Camilla
dc.contributor.authorHolst, Bodil
dc.date.accessioned2022-03-02T10:26:40Z
dc.date.available2022-03-02T10:26:40Z
dc.date.created2022-01-12T10:21:36Z
dc.date.issued2021
dc.identifier.issn0031-9007
dc.identifier.urihttps://hdl.handle.net/11250/2982390
dc.description.abstractThe change in bending rigidity with temperature κ(T) for 2D materials is highly debated: theoretical works predict both increase and decrease. Here we present measurements of κ(T), for a 2D material: AB-stacked bilayer graphene. We obtain κ(T) from phonon dispersion curves measured with helium atom scattering in the temperature range 320–400 K. We find that the bending rigidity increases with temperature. Assuming a linear dependence over the measured temperature region we obtain κ(T)=[(1.3 ± 0.1) + (0.006 ± 0.001)T/K] eV by fitting the data. We discuss this result in the context of existing predictions and room temperature measurements.en_US
dc.language.isoengen_US
dc.publisherAmerican Physical Societyen_US
dc.titleTemperature-Dependent Bending Rigidity of AB-Stacked Bilayer Grapheneen_US
dc.typeJournal articleen_US
dc.typePeer revieweden_US
dc.description.versionpublishedVersionen_US
dc.rights.holderCopyright 2021 American Physical Societyen_US
dc.source.articlenumber266102en_US
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode2
dc.identifier.doi10.1103/PhysRevLett.127.266102
dc.identifier.cristin1979123
dc.source.journalPhysical Review Lettersen_US
dc.identifier.citationPhysical Review Letters. 2021, 127, 266102.en_US
dc.source.volume127en_US


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