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dc.contributor.authorLa Rosa, A
dc.contributor.authorBoscardin, M
dc.contributor.authorDalla Betta, G.-F.
dc.contributor.authorDarbo, G
dc.contributor.authorGemme, C
dc.contributor.authorPernegger, H
dc.contributor.authorPiemonte, C
dc.contributor.authorPovoli, M
dc.contributor.authorRonchin, S
dc.contributor.authorZoboli, A
dc.contributor.authorZorzi, N
dc.contributor.authorBolle, Erlend
dc.contributor.authorBorri, M
dc.contributor.authorDa Via, C
dc.contributor.authorDong, S
dc.contributor.authorFazio, S
dc.contributor.authorGrenier, P
dc.contributor.authorGrinstein, S
dc.contributor.authorGjersdal, H
dc.contributor.authorHansson, P
dc.contributor.authorHuegging, F
dc.contributor.authorJackson, P
dc.contributor.authorKocian, M
dc.contributor.authorRiviero, F
dc.contributor.authorRøhne, Ole Myren
dc.contributor.authorSandaker, Heidi
dc.contributor.authorSjøbak, K
dc.contributor.authorSlavicek, T
dc.contributor.authorTsung, W
dc.contributor.authorTsybychev, D
dc.contributor.authorWermes, N
dc.contributor.authorYoung, C
dc.date.accessioned2016-08-09T09:41:32Z
dc.date.available2016-08-09T09:41:32Z
dc.date.issued2009
dc.PublishedPoS - Proceedings of Science 2009, RD09:032eng
dc.identifier.issn1824-8039en_US
dc.identifier.urihttps://hdl.handle.net/1956/12517
dc.descriptionPresented at: 9th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors - RD09. Florence, Italy, 30 September - 2 October 2009eng
dc.description.abstract3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200μm, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110μm to 150μm. The devices under test were bump bonded to the ATLAS Pixel readout chip (FEI3) at SELEX SI (Rome, Italy). We report leakage current and noise measurements, results of functional tests with Am241 γ-ray sources, charge collection tests with Sr90 β-source and an overview of preliminary results from the CERN beam test.en_US
dc.language.isoengeng
dc.publisherScuola Internazionale Superiore di Studi Avanzatien_US
dc.rightsAttribution-NonCommercial-ShareAlike CC BY-NC-SAeng
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/eng
dc.titlePreliminary results of 3D-DDTC pixel detectors for the ATLAS upgradeen_US
dc.typeConference object
dc.typeJournal article
dc.date.updated2016-04-08T12:39:03Z
dc.description.versionpublishedVersionen_US
dc.rights.holderCopyright by the authorsen_US
dc.identifier.cristin500526


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