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dc.contributor.authorEigen, Gerald
dc.date.accessioned2020-07-02T07:16:38Z
dc.date.available2020-07-02T07:16:38Z
dc.date.issued2019
dc.PublishedEigen G. Gain Stabilization of SiPMs and Afterpulsing. Journal of Physics: Conference Series. 2019;1162:012013eng
dc.identifier.issn1742-6596en_US
dc.identifier.issn1742-6588en_US
dc.identifier.urihttps://hdl.handle.net/1956/23217
dc.description.abstractThe gain of silicon photomultipliers increases with bias voltage and decreases with temperature. To operate SiPMs at stable gain, the bias voltage can be readjusted to compensate for temperature changes. We have tested this concept with 30 SiPMs from three manufacturers in a climate chamber at CERN varying the temperature from 1°C to 48°C. We built an adaptive power supply that is based on a linear dependence of bias voltage versus temperature. With one selected dV b /dT value, we stabilized four SiPMs simultaneously. We fulfilled our goal of stabilizing most SiPMs with gain changes of less than 0.5% in the 20° − 30°C temperature range. We studied afterpulsing of SiPMs for different temperatures and bias voltages.en_US
dc.language.isoengeng
dc.publisherIOPen_US
dc.rightsAttribution CC BYeng
dc.rights.urihttp://creativecommons.org/licenses/by/3.0eng
dc.titleGain Stabilization of SiPMs and Afterpulsingen_US
dc.typePeer reviewed
dc.typeJournal article
dc.date.updated2020-02-17T13:43:05Z
dc.description.versionpublishedVersionen_US
dc.identifier.doihttps://doi.org/10.1088/1742-6596/1162/1/012013
dc.identifier.cristin1709453
dc.source.journalJournal of Physics: Conference Series


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