Show simple item record

dc.contributor.authorAlmenningen, Stian
dc.contributor.authorLysyy, Maksim
dc.contributor.authorErsland, Geir
dc.date.accessioned2022-03-29T11:35:28Z
dc.date.available2022-03-29T11:35:28Z
dc.date.created2022-01-17T12:30:01Z
dc.date.issued2021
dc.identifier.issn1528-7483
dc.identifier.urihttps://hdl.handle.net/11250/2988332
dc.description.abstractIn this paper, we report the growth pattern and the rate of CH4 hydrate in sandstone pores. A high-pressure, water-wet, transparent micromodel with pores resembling a sandstone rock was used to visualize CH4 hydrate formation at reservoir conditions (P = 35–115 bar and T = 0.1–4.9 °C). The CH4 hydrate preferably formed and grew along the gas–water interface until the gas phase was completely encapsulated by a hydrate film. Two different growth rates were identified on the gas–water interface: CH4 hydrate film growth along the vertical pore walls (∼1200 μm/s) was more than 100 times faster than the film growth toward the pore center (∼8 μm/s). CH4 hydrate crystal growth directly in the water phase was slow and the rate was less than 0.5 μm/s. The film growth rate along the gas–water interface was independent of the pore size, gas saturation, and gas distribution, but the pore wall growth rate displayed a power law dependency on the applied subcooling temperature, ΔT, with a power law exponent equal to 2. The results of this study can be used as input to numerical models aiming to simulate pore-scale CH4 hydrate growth behavior.en_US
dc.language.isoengen_US
dc.publisherAmerican Chemical Societyen_US
dc.rightsNavngivelse 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/deed.no*
dc.titleQuantification of CH4 Hydrate Film Growth Rates in Micromodel Poresen_US
dc.typeJournal articleen_US
dc.typePeer revieweden_US
dc.description.versionpublishedVersionen_US
dc.rights.holderCopyright 2021 The Authorsen_US
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode2
dc.identifier.doi10.1021/acs.cgd.1c00396
dc.identifier.cristin1982478
dc.source.journalCrystal Growth & Designen_US
dc.source.pagenumber4090-4099en_US
dc.identifier.citationCrystal Growth & Design. 2021, 21 (7), 4090-4099.en_US
dc.source.volume21en_US
dc.source.issue7en_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record

Navngivelse 4.0 Internasjonal
Except where otherwise noted, this item's license is described as Navngivelse 4.0 Internasjonal