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dc.contributor.authorTømterud, Martin
dc.contributor.authorEder, Sabrina Daniela
dc.contributor.authorBüchner, Christin
dc.contributor.authorHeyde, Markus
dc.contributor.authorFreund, Hans Joachim
dc.contributor.authorManson, Joseph R.
dc.contributor.authorHolst, Bodil
dc.date.accessioned2022-10-07T11:59:17Z
dc.date.available2022-10-07T11:59:17Z
dc.date.created2022-09-01T16:09:44Z
dc.date.issued2022
dc.identifier.issn1463-9076
dc.identifier.urihttps://hdl.handle.net/11250/3024520
dc.description.abstractTwo dimensional (2D) materials are a young class of materials that is foreseen to play an important role as building blocks in a range of applications, e.g. flexible electronics. For such applications, mechanical properties such as the bending rigidity κ are important. Only a few published measurements of the bending rigidity are available for 2D materials. Nearly unexplored is the question of how the 2D material density influences the bending rigidity. Here, we present helium atom scattering measurements on a “holey” bilayer silica with a density of 1.4 mg m−2, corresponding to 1.7 monolayers coverage. We find a bending rigidity of 6.6 ± 0.3 meV, which is lower than previously published measurements for a complete 2D film, where a value of 8.8 ± 0.5 meV was obtained. The decrease of bending rigidity with lower density is in agreement with theoretical predictions.en_US
dc.language.isoengen_US
dc.publisherRoyal Society of Chemistryen_US
dc.rightsNavngivelse 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/deed.no*
dc.titleVariation of bending rigidity with material density: bilayer silica with nanoscale holesen_US
dc.typeJournal articleen_US
dc.typePeer revieweden_US
dc.description.versionpublishedVersionen_US
dc.rights.holderCopyright the Owner Societies 2022en_US
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode2
dc.identifier.doi10.1039/d2cp01960d
dc.identifier.cristin2048025
dc.source.journalPhysical Chemistry, Chemical Physics - PCCPen_US
dc.source.pagenumber17941-17945en_US
dc.identifier.citationPhysical Chemistry, Chemical Physics - PCCP. 2022, 24 (30), 17941-17945.en_US
dc.source.volume24en_US
dc.source.issue30en_US


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