dc.contributor.author | Zalieckas, Justas | |
dc.contributor.author | Pobedinskas, P. | |
dc.contributor.author | Greve, Martin Møller | |
dc.contributor.author | Eikehaug, Kristoffer | |
dc.contributor.author | Haenen, K. | |
dc.contributor.author | Holst, Bodil | |
dc.date.accessioned | 2022-04-08T09:17:58Z | |
dc.date.available | 2022-04-08T09:17:58Z | |
dc.date.created | 2021-12-08T11:33:12Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 0925-9635 | |
dc.identifier.uri | https://hdl.handle.net/11250/2990722 | |
dc.description.abstract | Diamond growth at low temperatures (≤400 °C) and over large areas is attractive for materials, which are sensitive to high temperatures and require good electronic, chemical or surface tribological properties. Resonant-cavity microwave plasma enhanced (MWPE) chemical vapor deposition (CVD) is a standard method for growing diamonds, however, with limited deposition area. An alternative method for CVD of diamond over large area and at low temperature is to use a surface wave plasma (SWP). In this work we introduce a novel method to excite SWP using composite right/left-handed (CRLH) materials and demonstrate growth of nanocrystalline diamond (NCD) on 4-inch Si wafers. The method uses a set of slotted CRLH waveguides coupled to a resonant launcher, which is connected to a deposition chamber. Each CRLH waveguide supports infinite wavelength propagation and consists of a chain of periodically cascaded unit cells. The SWP is excited by a set of slots placed to interrupt large area surface current on the resonant launcher. This configuration yields a uniform gas discharge distribution. We achieve 80 nm/h growth rate for NCD films with a low surface roughness (5–10 nm) at 395 °C and 0.5 mbar pressure using a H2/CH4/CO2 gas mixture. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Elsevier | en_US |
dc.rights | Navngivelse 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/deed.no | * |
dc.title | Large area microwave plasma CVD of diamond using composite right/left-handed materials | en_US |
dc.type | Journal article | en_US |
dc.type | Peer reviewed | en_US |
dc.description.version | publishedVersion | en_US |
dc.rights.holder | Copyright 2021 The Author(s) | en_US |
dc.source.articlenumber | 108394 | en_US |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |
dc.identifier.doi | 10.1016/j.diamond.2021.108394 | |
dc.identifier.cristin | 1966120 | |
dc.source.journal | Diamond and related materials | en_US |
dc.identifier.citation | Diamond and related materials. 2021, 116, 108394. | en_US |
dc.source.volume | 116 | en_US |